Silicon carbide bricks are advanced refractory materials made of SiC as the main raw material, with a series of excellent properties such as high strength at normal temperature and high temperature, large thermal conductivity, small thermal expansion coefficient, good thermal shock resistance, excellent high temperature wear resistance, and strong resistance to chemical erosion, etc. Widely used in steel industry, non-ferrous metallurgy, petrochemical industry, electric power, ceramics and aerospace fields.

Silicon carbide bricks can be divided into oxide bonded (clay bonded, mullite bonded, SiO2 bonded), nitride bonded (Si3N4 bonded, Sialon bonded), self bonded (β-SiC bonded and recrystallized silicon carbide) and silicon infiltration reaction sintered silicon carbide bricks according to the bonding method.

Clay-bonded silicon carbide bricks are refractory products made of silicon carbide as the main raw material and fired with clay as the binding agent. Its characteristics are high thermal conductivity, low coefficient of thermal expansion, good thermal shock resistance and wear resistance.

Mullite bonded silicon carbide brick made of high purity raw materials, with industrial silicon carbide as the main raw material through in situ generation and crystalline transformation of mullite phase to play a binding role. Compared to clay bonded silicon carbide brick, the performance is better.

SiO2 bonded silicon carbide bricks are produced by adding a certain amount of quartz powder, which enhances the oxidation resistance by binding silicon carbide particles together with the help of silica film generated. The high temperature performance is better than clay bonded silicon carbide brick, and the high temperature strength is higher compared to mullite bonded silicon carbide brick.

Items Specifications
Clay Bonded SiC Mullite Bonded SiC SiO2 Bonded SiC
SiC  % >85 >70 ≥90
Bulk Density  g/cm3 2.5~2.6 2.55~2.65 2.6~2.7
Apparent Porosity  % ≤20 ≤16 ≤15
CCS  MPa ≥100 ≥100 ≥120
CMOR  MPa ≥20 ≥25 ≥25
Thermal Expansion Coefficient

-1 20~1000℃

4.6×10-6 4.6×10-6 4.7×10-6
Thermal Conductivity  W/(m·K) 1000℃ ≥11 ≥11 ≥13